- 专利标题： SUBSTRATE TREATMENT DEVICE AND SUBSTRATE TREATMENT METHOD
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申请号： US16916288申请日： 2020-06-30
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公开(公告)号： US20200335324A1公开(公告)日： 2020-10-22
- 发明人: Masaya Kamiya , Kensuke Demura , Daisuke Matsushima , Haruka Nakano , Ivan Petrov Ganachev
- 申请人： Shibaura Mechatronics Corporation
- 优先权： com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@513b549e
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; G03F7/40 ; G03F7/42 ; B08B3/10 ; B08B7/00 ; H01L21/67 ; H01L21/687 ; H01L21/66
摘要：
A substrate treatment device according to an embodiment includes a placement portion on which a substrate is placed and rotated, a liquid supply portion which supplies a liquid to a surface on an opposite side to the placement portion of the substrate, a cooling portion which supplies a cooling gas to a surface on a side of the placement portion of the substrate, and a control portion which controls at least one of a rotation speed of the substrate, a supply amount of the liquid, and a flow rate of the cooling gas. The control portion brings the liquid present on a surface of the substrate into a supercooled state and causes at least a part of the liquid brought into the supercooled state to freeze.
公开/授权文献
- US11355337B2 Substrate treatment device and substrate treatment method 公开/授权日：2022-06-07
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