Invention Application
- Patent Title: APPARATUS AND TECHNIQUES FOR ANGLED ETCHING USING MULTIELECTRODE EXTRACTION SOURCE
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Application No.: US16682888Application Date: 2019-11-13
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Publication No.: US20200185201A1Publication Date: 2020-06-11
- Inventor: Peter F. Kurunczi , Morgan Evans , Joseph C. Olson
- Applicant: APPLIED Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED Materials, Inc.
- Current Assignee: APPLIED Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01J37/32
- IPC: H01J37/32 ; G02B5/18

Abstract:
A plasma source may include a plasma chamber, where the plasma chamber has a first side, defining a first plane and an extraction assembly, disposed adjacent to the side of the plasma chamber, where the extraction assembly includes at least two electrodes. A first electrode may be disposed immediately adjacent the side of the plasma chamber, wherein a second electrode defines a vertical displacement from the first electrode along a first direction, perpendicular to the first plane, wherein the first electrode comprises a first aperture, and the second electrode comprises a second aperture. The first aperture may define a lateral displacement from the second aperture along a second direction, parallel to the first plane, wherein the vertical displacement and the lateral displacement define a non-zero angle of inclination with respect to a perpendicular to the first plane.
Public/Granted literature
- US11195703B2 Apparatus and techniques for angled etching using multielectrode extraction source Public/Granted day:2021-12-07
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