发明申请
- 专利标题： SOLID-STATE IMAGE SENSOR, METHOD OF PRODUCING THE SAME, AND ELECTRONIC APPARATUS
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申请号： US16749863申请日： 2020-01-22
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公开(公告)号： US20200161375A1公开(公告)日： 2020-05-21
- 发明人: Shunsuke Maruyama
- 申请人： Sony Semiconductor Solutions Corporation
- 申请人地址： JP Kanagawa
- 专利权人： Sony Semiconductor Solutions Corporation
- 当前专利权人： Sony Semiconductor Solutions Corporation
- 当前专利权人地址： JP Kanagawa
- 优先权： com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@292a3181
- 主分类号： H01L27/30
- IPC分类号： H01L27/30 ; H01L27/146
摘要：
A solid-state image sensor includes a pixel formed, upon forming a structure where a photoelectric conversion layer is laminated on a wiring layer constituting a pixel circuit, by forming at least the photoelectric conversion layer and a wiring layer bonding layer on a different substrate from a semiconductor substrate in which the wiring layer is formed, and by bonding the wiring layer bonding film of the different substrate and the wiring layer of the semiconductor substrate together.
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