Invention Application
- Patent Title: Method for of Measuring a Parameter Relating to a Structure Formed Using a Lithographic Process
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Application No.: US16556685Application Date: 2019-08-30
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Publication No.: US20200089125A1Publication Date: 2020-03-19
- Inventor: Sergei SOKOLOV , Jin Lian
- Applicant: ASML Netherlands B.V.
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- Priority: EP18194625.2 20180914
- Main IPC: G03F7/20
- IPC: G03F7/20

Abstract:
Disclosed method of measuring a parameter relating to a structure formed using a lithographic process, and more specifically focus or line edge roughness. The method includes measuring a structure having a dimension, e.g., a critical dimension, which is sufficiently large to enable radiation diffracted by at least one edge of said structure to be (e.g., individually) optically resolved. The method comprises obtaining an intensity metric from an image of the at least one edge and determining a value for said parameter based on the intensity metric.
Public/Granted literature
- US10831107B2 Method for of measuring a parameter relating to a structure formed using a lithographic process Public/Granted day:2020-11-10
Information query
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