Invention Application
- Patent Title: BUMP STRUCTURE HAVING A SIDE RECESS AND SEMICONDUCTOR STRUCTURE INCLUDING THE SAME
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Application No.: US16458324Application Date: 2019-07-01
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Publication No.: US20190326240A1Publication Date: 2019-10-24
- Inventor: Chih-Horng Chang , Tin-Hao Kuo , Chen-Shien Chen , Yen-Liang Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L25/00
Abstract:
The present disclosure, in some embodiments, relates to a bump structure. The bump structure includes a conductive layer and a solder layer. The solder layer is disposed vertically below and laterally between portions of the conductive layer along a cross-section. The conductive layer is continuous between the portions.
Public/Granted literature
- US10833033B2 Bump structure having a side recess and semiconductor structure including the same Public/Granted day:2020-11-10
Information query
IPC分类:
