发明申请
- 专利标题: ARTIFICIAL NEURON APPARATUS
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申请号: US16435527申请日: 2019-06-09
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公开(公告)号: US20190294952A1公开(公告)日: 2019-09-26
- 发明人: Evangelos S. Eleftheriou , Angeliki Pantazi , Abu Sebastian , Tomas Tuma
- 申请人: International Business Machines Corporation
- 主分类号: G06N3/04
- IPC分类号: G06N3/04 ; G06N3/063
摘要:
A resistive memory cell is connected in circuitry which has a first input terminal for applying neuron input signals including a read portion and a write portion. The circuitry includes a read circuit producing a read signal dependent on resistance of the memory cell, and an output terminal providing a neuron output signal, dependent on the read signal in a first state of the memory cell. The circuitry also includes a storage circuit storing a measurement signal dependent on the read signal, and a switch set operable to supply the read signal to the storage circuit during application of the read portion of each neuron input signal to the memory cell, and, after application of the read portion, to apply the measurement signal in the apparatus to enable resetting of the memory cell to a second state.
公开/授权文献
- US10949735B2 Artificial neuron apparatus 公开/授权日:2021-03-16
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