发明申请
- 专利标题： VERTICAL FIN-TYPE BIPOLAR JUNCTION TRANSISTOR WITH SELF-ALIGNED BASE CONTACT
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申请号： US15837321申请日： 2017-12-11
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公开(公告)号： US20190181236A1公开(公告)日： 2019-06-13
- 发明人: Choonghyun Lee , Seyoung Kim , Injo Ok , Soon-Cheon Seo
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 主分类号： H01L29/423
- IPC分类号： H01L29/423 ; H01L29/737 ; H01L21/768 ; H01L29/732 ; H01L29/417 ; H01L29/08 ; H01L29/66
摘要：
A bipolar junction transistor includes a collector having a first surface on a first level and a second surface on a second level. A base is formed on the second level of the collector, and an emitter is formed on the base. A dielectric liner is formed on vertical sidewalls of the collector, the base and the emitter and over the first surface. A conductive region is formed adjacent to the base in the dielectric liner. A base contact is formed along one of the vertical sidewalls to connect to the base through the conductive region.
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