A semiconductor device includes a passivation layer, an interconnection metallization 37 having a peripheral portion over the passivation layer, and an outer surface coating 37 on the interconnection metallization. A diffusion barrier layer comprises an inner planar portion directly on the surface of the passivation layer and a peripheral portion extending along a plane at a vertical height higher than the surface of the passivation layer, so that the peripheral portion forms with the inner portion a step in the barrier layer. The outer surface coating, has a vertical wall with a foot adjacent to the peripheral portion and positioned at the vertical height over the surface of the passivation layer to form a hollow recess area between the surface of the passivation layer and both of the peripheral portion and the foot of the outer surface coating.