- 专利标题： III-NITRIDE TUNNEL JUNCTION WITH MODIFIED P-N INTERFACE
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申请号： US15773864申请日： 2016-11-01
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公开(公告)号： US20180374699A1公开(公告)日： 2018-12-27
- 发明人: Benjamin P. Yonkee , Erin C. Young , John T. Leonard , Tal Margalith , James S. Speck , Steven P. DenBaars , Shuji Nakamura
- 申请人： The Regents of the University of California
- 申请人地址： US CA Oakland
- 专利权人： The Regents of the University of California
- 当前专利权人： The Regents of the University of California
- 当前专利权人地址： US CA Oakland
- 国际申请： PCT/US2016/059929 WO 20161101
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L29/15 ; H01L29/20 ; H01L29/207 ; H01L29/36 ; H01L29/885 ; H01L31/18 ; H01L31/0352 ; H01L31/0304 ; H01L33/00 ; H01L33/06 ; H01L33/32
摘要：
A III-nitride tunnel junction with a modified p-n interface, wherein the modified p-n interface includes a delta-doped layer to reduce tunneling resistance. The delta-doped layer may be doped using donor atoms comprised of Oxygen (O), Germanium (Ge) or Silicon (Si); acceptor atoms comprised of Magnesium (Mg) or Zinc (Zn); or impurities comprised of Iron (Fe) or Carbon (C).
公开/授权文献
- US10685835B2 III-nitride tunnel junction with modified P-N interface 公开/授权日：2020-06-16
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