- 专利标题: SENSE FLAGS IN A MEMORY DEVICE
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申请号: US16117348申请日: 2018-08-30
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公开(公告)号: US20180373451A1公开(公告)日: 2018-12-27
- 发明人: Shafqat Ahmed , Khaled Hasnat , Pranav Kalavade , Krishna Parat , Aaron Yip , Mark A. Helm , Andrew Bicksler
- 申请人: MICRON TECHNOLOGY, INC.
- 申请人地址: US ID BOISE
- 专利权人: MICRON TECHNOLOGY, INC.
- 当前专利权人: MICRON TECHNOLOGY, INC.
- 当前专利权人地址: US ID BOISE
- 主分类号: G06F3/06
- IPC分类号: G06F3/06 ; G11C16/26 ; G11C16/24 ; G11C16/04 ; G06F13/28 ; G06F12/0846 ; G06F12/0804
摘要:
Methods for programming sense flags may include programming memory cells coupled to first data lines in a main memory array, and programming memory cells coupled to second data lines in the main memory array while programming memory cells coupled to data lines in a flag memory array with flag data indicative of the memory cells coupled to the second data lines being programmed. Methods for sensing flags may include performing a sense operation on memory cells coupled to first data lines of a main memory array and memory cells coupled to data lines of a flag memory array, and determining a program indication of memory cells coupled to second data lines of the main memory array from the sense operation performed on the memory cells coupled to the data lines of the flag memory array.
公开/授权文献
- US10409506B2 Sense flags in a memory device 公开/授权日:2019-09-10
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