- 专利标题： ZINC NITRIDE COMPOUND AND METHOD FOR PRODUCING SAME
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申请号： US15767550申请日： 2016-10-14
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公开(公告)号： US20180354791A1公开(公告)日： 2018-12-13
- 发明人: Fumiyasu OBA , Hideo HOSONO , Hidenori HIRAMATSU , Hideya KUMOMI , Yu KUMAGAI , Soshi IIMURA , Yoshinori MURABA , Lee Alan BURTON , Isao TANAKA , Yoyo HINUMA
- 申请人： Panasonic Corporation
- 优先权： JP2015-203891 20151015
- 国际申请： PCT/JP2016/080597 WO 20161014
- 主分类号： C01B21/06
- IPC分类号： C01B21/06 ; C09K11/08 ; C09K11/55 ; H01L29/24 ; H01L33/26 ; H01L31/032
摘要：
The present invention provides a zinc nitride compound suitable for electronic devices such as high-speed transistors, high-efficiency visible light-emitting devices, high-efficiency solar cells, and high-sensitivity visible light sensors. The zinc nitride compound is represented, for example, by the chemical formula CaZn2N2 or the chemical formula X12ZnN2 wherein X1 is Be or Mg. The zinc nitride compound is preferably synthesized at a high pressure of 1 GPa or more.
公开/授权文献
- US10308521B2 Zinc nitride compound and method for producing same 公开/授权日：2019-06-04
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