发明申请
- 专利标题： COMPOSITION FOR FORMING FINE RESIST PATTERN AND PATTERN FORMING METHOD USING SAME
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申请号： US15775661申请日： 2016-11-02
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公开(公告)号： US20180329301A1公开(公告)日： 2018-11-15
- 发明人: Xiaowei WANG
- 申请人： AZ Electronic Materrials (Luxembourg) S.a.r.l.
- 优先权： EP15003294.4 20151119
- 国际申请： PCT/EP2016/001816 WO 20161102
- 主分类号： G03F7/11
- IPC分类号： G03F7/11 ; G03F7/16 ; G03F7/40 ; G03F7/038 ; C09D139/08
摘要：
The present invention relates to a shrink material composition for fattening a resist pattern prepared from a negative-tone lithography process, comprising at least one polymer and at least one organic solvent, wherein the at least one polymer comprises at least one structural unit of a nitrogen heteroaromatic ring system.
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