- 专利标题: POWER AMPLIFIER CONFIGURATIONS WITH POWER DENSITY MATCHING
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申请号: US15792692申请日: 2017-10-24
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公开(公告)号: US20180159487A1公开(公告)日: 2018-06-07
- 发明人: Anatoli PUKHOVSKI
- 申请人: SKYWORKS SOLUTIONS, INC.
- 主分类号: H03F3/21
- IPC分类号: H03F3/21 ; H03F1/02 ; H03F3/45 ; H03F3/19
摘要:
Circuits and methods related to power amplifiers. In some implementations, a bias circuit includes a reference device connectable to receive a first electrical supply level, the reference device arranged to produce an electrical bias condition using the first electrical supply level, and the reference device connectable to provide the electrical bias condition to an amplifier device connectable to a second electrical supply level. The bias circuit also includes a differential amplifier connectable to receive the first electrical supply level, the differential amplifier having a first input connectable to a first node of the reference device and a second input connectable to receive a reference electrical level, the differential amplifier arranged to maintain a first electrical level on the first node of the reference device as a function of the reference electrical level.
公开/授权文献
- US10312871B2 Power amplifier configurations with power density matching 公开/授权日:2019-06-04
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