A method for producing a member for a semiconductor manufacturing apparatus 10 includes (a) a step of providing an electrostatic chuck 20, a supporting substrate 30, and a metal bonding material 401, the electrostatic chuck being made of a ceramic and having a form of a flat plate, the supporting substrate including a composite material having a difference in linear thermal expansion coefficient at 40 to 570° C. from the ceramic of 0.2×10−6/K or less in absolute value, and (b) a step of interposing the metal bonding material 401 between a concave face 32 of the supporting substrate 30 and a face 23 of the electrostatic chuck 20 opposite to a wafer mounting face 22, and thermocompression bonding the supporting substrate 30 and the electrostatic chuck 20 at a predetermined temperature to deform the electrostatic chuck 20 to the shape of the concave face 32.