Invention Application
- Patent Title: Method of Forming Fine Patterns Using Block Copolymer
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Application No.: US15712698Application Date: 2017-09-22
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Publication No.: US20180086869A1Publication Date: 2018-03-29
- Inventor: Jin Su Ham , Yeon Sik Jung , Sun Young Kim , Yoon Hyung Hur , Kwang Kuk Lee , Seung Won Song
- Applicant: SK Innovation Co., Ltd. , Korea Advanced Institute of Science and Technology
- Priority: KR10-2016-0121959 20160923
- Main IPC: C08F220/18
- IPC: C08F220/18 ; C08F212/08 ; C08F114/18 ; C08F293/00
Abstract:
Provided is a method of forming fine patterns capable of minimizing LER and LWR to form high quality nanopatterns, by using a block copolymer having excellent etching selectivity. Provided is a block copolymer comprising a first block having a repeating unit represented by the following Chemical Formula 1, and a second block having a repeating unit represented by the following Chemical Formula 2:
Public/Granted literature
- US10047182B2 Method of forming fine patterns using block copolymer Public/Granted day:2018-08-14
Information query
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