• 专利标题: METHODS OF FORMING PATTERNS USING NANOIMPRINT LITHOGRAPHY
  • 申请号: US15464674
    申请日: 2017-03-21
  • 公开(公告)号: US20180074419A1
    公开(公告)日: 2018-03-15
  • 发明人: Woo Yung JUNG
  • 申请人: SK hynix Inc.
  • 优先权: KR10-2016-0117590 20160912
  • 主分类号: G03F9/00
  • IPC分类号: G03F9/00 G03F7/00
METHODS OF FORMING PATTERNS USING NANOIMPRINT LITHOGRAPHY
摘要:
A method of forming patterns is provided. The method includes forming a resist layer on a substrate, imprinting transfer patterns of a template on the resist layer, performing an alignment operation to correct a position of the substrate or the template, increasing a viscosity of the resist layer while the alignment operation is performed, and curing the resist layer after the alignment operation terminates.
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