- 专利标题: HIGH DENSITY REDISTRIBUTION LAYER (RDL) INTERCONNECT BRIDGE USING A RECONSTITUTED WAFER
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申请号: US15198991申请日: 2016-06-30
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公开(公告)号: US20170365565A1公开(公告)日: 2017-12-21
- 发明人: Sam Ziqun ZHAO , Rezaur Rahman Khan
- 申请人: Broadcom Corporation
- 申请人地址: US CA Irvine
- 专利权人: Broadcom Corporation
- 当前专利权人: Broadcom Corporation
- 当前专利权人地址: US CA Irvine
- 主分类号: H01L23/00
- IPC分类号: H01L23/00 ; H01L21/48 ; H01L21/56 ; H01L21/78 ; H01L21/60
摘要:
An integrated circuit (IC) package is disclosed that contains high density interconnects to connect multiple dies. The IC package includes an encapsulated layer, a first dielectric layer, and a second dielectric layer. The encapsulated layer forms the base of the IC package and includes the multiple dies. The first dielectric layer positioned between the encapsulated layer and the second layer. The first dielectric layer includes vias to connect to the input/ouput pads of active surfaces of the multiple dies. The second dielectric layer includes interconnect layers where at least one of the interconnect layers forms an electrical path to connect at least two of the multiple dies together. According to embodiments of the present disclosure, the IC package enables a high manufacturing yield due to large tolerances allowed for selection of dies. Embodiments of the present disclosure also increase an amount of input/output interconnection between multiple dies in the IC package. Embodiments of the present disclosure further enable lower manufacturing costs because of the use of mature reconstituted dies and redistribution layer technologies and the lack of a need for an interposer to connect multiple dies.
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