Embodiments of the invention include metal oxide metal field effect transistors (MOMFETs) and methods of making such devices. In embodiments, the MOMFET device includes a source and a drain with a channel disposed between the source and the drain. According to an embodiment, the channel has at least one confined dimension that produces a quantum confinement effect in the channel. In an embodiment, the MOMFET device also includes a gate electrode that is separated from the channel by a gate dielectric. According to embodiments, the band-gap energy of the channel may be modulated by changing the size of the channel, the material used for the channel, and/or the surface termination applied to the channel. Embodiments also include forming an type device and a P-type device by controlling the work-function of the source and drain relative to the conduction band and valance band energies of the channel.