- 专利标题： METHOD OF FORMING A SEMICONDUCTOR DEVICE STRUCTURE AND SEMICONDUCTOR DEVICE STRUCTURE
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申请号： US15653661申请日： 2017-07-19
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公开(公告)号： US20170317097A1公开(公告)日： 2017-11-02
- 发明人: Juergen Faul , Frank Jakubowski
- 申请人： GLOBALFOUNDRIES Inc.
- 主分类号： H01L27/11568
- IPC分类号： H01L27/11568 ; H01L29/423 ; H01L27/12 ; H01L27/11521 ; H01L21/762 ; H01L21/311 ; H01L21/308 ; H01L21/3065 ; H01L21/28 ; H01L21/265
摘要：
A semiconductor device structure includes a hybrid substrate having a semiconductor-on-insulator (SOI) region that includes an active semiconductor layer, a substrate material and a buried insulating material interposed between the active semiconductor layer and the substrate material, and a bulk semiconductor region that includes the substrate material. An insulating structure is positioned in the hybrid substrate, wherein the insulating structure separates the bulk region from the SOI region, and a gate electrode is positioned above the substrate material in the bulk region, wherein the insulating structure is in contact with two opposing sidewalls of the gate electrode.
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