A programmable resistive memory having a plurality of programmable resistive cells. At least one of the programmable resistive cell includes a programmable resistive element and at least one selector. The selector can be built in at least one fin structure and at least one active region divided by at least one MOS gate into a first active region and a second active region. The first active region can have a first type of dopant to provide a first terminal of the selector. The second active region can have a first or a second type of dopant to provide a second terminal of the selector. The MOS gate can provide a third terminal of the selector. The first terminal of the selector can be coupled to the first terminal of the programmable resistive element. The programmable resistive element can be programmed by conducting current flowing through the selector to thereby change the resistance state.