Invention Application
- Patent Title: BONDING WIRE FOR SEMICONDUCTOR DEVICE
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Application No.: US14915189Application Date: 2015-05-20
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Publication No.: US20170110430A1Publication Date: 2017-04-20
- Inventor: Tetsuya OYAMADA , Tomohiro UNO , Hiroyuki DEAI , Daizo ODA
- Applicant: NIPPON STEEL & SUMIKIN MATERIALS CO., LTD. , NIPPON MICROMETAL CORPORATION
- Priority: JP2014-142127 20140710
- International Application: PCT/JP2015/064417 WO 20150520
- Main IPC: H01L23/00
- IPC: H01L23/00 ; C22C5/10
Abstract:
The present invention provides a bonding wire which can satisfy bonding reliability, spring performance, and chip damage performance required in high-density packaging. A bonding wire contains one or more of In, Ga, and Cd for a total of 0.05 to 5 at %, and a balance being made up of Ag and incidental impurities.
Public/Granted literature
- US10381320B2 Silver bonding wire for semiconductor device containing indium, gallium, and/or cadmium Public/Granted day:2019-08-13
Information query
IPC分类:
