- 专利标题: SEMICONDUCTOR CHIPS HAVING DEFECT DETECTING CIRCUITS
-
申请号: US15201675申请日: 2016-07-05
-
公开(公告)号: US20170103929A1公开(公告)日: 2017-04-13
- 发明人: Bo-Ra LEE , Jae-Ho JEONG , Nam-Gyu BAEK , Hyo-Seok WOO , Hyun-Sook YOON , Kwang-Yong LEE
- 申请人: Bo-Ra LEE , Jae-Ho JEONG , Nam-Gyu BAEK , Hyo-Seok WOO , Hyun-Sook YOON , Kwang-Yong LEE
- 优先权: KR10-2015-0167248 20151127
- 主分类号: H01L21/66
- IPC分类号: H01L21/66 ; H01L27/115 ; H01L23/00 ; H01L29/423
摘要:
A semiconductor chip includes: a gate pattern on a substrate; an interlayer insulation layer on the gate pattern; a first wiring structure on the interlayer insulation layer; and a defect detection circuit electrically connected to the gate pattern and the first wiring structure. The first wiring structure is electrically connected to the gate pattern via a contact plug through the interlayer insulation layer. The defect detection circuit is electrically connected to the gate pattern and the first wiring structure, and the defect detection circuit is configured to detect defects in the first wiring structure and at least one of the gate pattern and the substrate.
公开/授权文献
- US09698066B2 Semiconductor chips having defect detecting circuits 公开/授权日:2017-07-04
信息查询
IPC分类: