Invention Application
- Patent Title: NANOSCALE PLASMONIC FIELD-EFFECT MODULATOR
- Patent Title (中): 纳米级PLASMONIC场效应调制器
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Application No.: US15331435Application Date: 2016-10-21
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Publication No.: US20170059894A1Publication Date: 2017-03-02
- Inventor: Ho Wai Lee , Stanley Burgos , Georgia Papadakis , Harry A. Atwater
- Applicant: California Institute of Technology
- Main IPC: G02F1/025
- IPC: G02F1/025
Abstract:
A plasmonic device having a transparent conducting oxide (TCO) waveguide and a tunable voltage applied across the TCO and a metal layer for modulating an input optical signal.
Public/Granted literature
- US09864109B2 Nanoscale plasmonic field-effect modulator Public/Granted day:2018-01-09
Information query
