Invention Application
- Patent Title: SOLID-SOURCE DIFFUSED JUNCTION FOR FIN-BASED ELECTRONICS
- Patent Title (中): 基于电子元件的固体电极扩散接头
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Application No.: US15121879Application Date: 2014-07-14
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Publication No.: US20170018658A1Publication Date: 2017-01-19
- Inventor: Walid M. HAFEZ , Chia-Hong JAN
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- International Application: PCT/US2014/046525 WO 20140714
- Main IPC: H01L29/8605
- IPC: H01L29/8605 ; H01L29/66 ; H01L29/808

Abstract:
A solid source-diffused junction is described for fin-based electronics. In one example, a fin is formed on a substrate. A glass of a first dopant type is deposited over the substrate and over a lower portion of the fin. A glass of a second dopant type is deposited over the substrate and the fin. The glass is annealed to drive the dopants into the fin and the substrate. The glass is removed and a first and a second contact are formed over the fin without contacting the lower portion of the fin.
Public/Granted literature
- US09842944B2 Solid-source diffused junction for fin-based electronics Public/Granted day:2017-12-12
Information query
IPC分类: