Invention Application
US20170005098A1 STRUCTURE AND METHOD TO PREVENT EPI SHORT BETWEEN TRENCHES IN FINFET EDRAM
有权
结构和方法，以防止FINFET EDRAM中的耳环之间的短路
- Patent Title: STRUCTURE AND METHOD TO PREVENT EPI SHORT BETWEEN TRENCHES IN FINFET EDRAM
- Patent Title (中): 结构和方法，以防止FINFET EDRAM中的耳环之间的短路
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Application No.: US14755404Application Date: 2015-06-30
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Publication No.: US20170005098A1Publication Date: 2017-01-05
- Inventor: Michael V. Aquilino , Veeraraghavan S. Basker , Kangguo Cheng , Gregory Costrini , Ali Khakifirooz , Byeong Y. Kim , William L. Nicoll , Ravikumar Ramachandran , Reinaldo A. Vega , Hanfei Wang , Xinhui Wang
- Applicant: International Business Machines Corporation
- Main IPC: H01L27/108
- IPC: H01L27/108
Abstract:
After forming a laterally contacting pair of a semiconductor fin and a conductive strap structure having a base portion vertically contacting a deep trench capacitor embedded in a substrate and a fin portion laterally contacting the semiconductor fin, conducting spikes that are formed on the sidewalls of the deep trench are removed or pushed deeper into the deep trench. Subsequently, a dielectric cap that inhibits epitaxial growth of a semiconductor material thereon is formed over at least a portion of the base portion of the conductive strap structure. The dielectric cap can be formed either over an entirety of the base portion having a stepped structure or on a distal portion of the base portion.
Public/Granted literature
- US09818741B2 Structure and method to prevent EPI short between trenches in FINFET eDRAM Public/Granted day:2017-11-14
Information query
IPC分类:
