发明申请
- 专利标题： QUANTUM-DOT-IN-PEROVSKITE SOLIDS
- 专利标题（中）： QUOTUM-DOT-IN-PEROVSKITE固体
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申请号： US15063102申请日： 2016-03-07
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公开(公告)号： US20160380136A1公开(公告)日： 2016-12-29
- 发明人: Zhijun NING , Xiwen GONG , Riccardo COMIN , Oleksandr VOZNYY , Edward SARGENT
- 申请人： THE GOVERNING COUNCIL OF THE UNIVERSITY OF TORONTO
- 主分类号： H01L31/0352
- IPC分类号： H01L31/0352 ; H01L31/028 ; H01L31/0296 ; H01L31/032
摘要：
The present disclosure provides a composite material of a pre-formed crystalline or polycrystalline semiconductor particles embedded in a crystalline or polycrystalline perovskite matrix material. The pre-formed crystalline or polycrystalline semiconductor particles and and crystalline or polycrystalline perovskite being selected so that any lattice mismatch between the two lattices does not exceed about 10%. The pre-formed crystalline or polycrystalline semiconductor particles and said crystalline or polycrystalline perovskite matrix material have lattice planes that are substantially aligned.
公开/授权文献
- US10181538B2 Quantum-dot-in-perovskite solids 公开/授权日：2019-01-15
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