发明申请
US20160343687A1 SEMICONDUCTOR DEVICE ASSEMBLY WITH HEAT TRANSFER STRUCTURE FORMED FROM SEMICONDUCTOR MATERIAL
有权
具有由半导体材料形成的热传递结构的半导体器件组件
- 专利标题: SEMICONDUCTOR DEVICE ASSEMBLY WITH HEAT TRANSFER STRUCTURE FORMED FROM SEMICONDUCTOR MATERIAL
- 专利标题(中): 具有由半导体材料形成的热传递结构的半导体器件组件
-
申请号: US14716176申请日: 2015-05-19
-
公开(公告)号: US20160343687A1公开(公告)日: 2016-11-24
- 发明人: Sameer S. Vadhavkar , Jaspreet S. Gandhi , James M. Derderian
- 申请人: Micron Technology, Inc.
- 主分类号: H01L25/065
- IPC分类号: H01L25/065 ; H01L23/373 ; H01L21/78 ; H01L25/00
摘要:
Semiconductor device assemblies with heat transfer structures formed from semiconductor materials are disclosed herein. In one embodiment, a semiconductor device assembly can include a thermal transfer structure formed from a semiconductor substrate. The thermal transfer structure includes an inner region, an outer region projecting from the inner region, and a cavity defined in the outer region by the inner and outer regions. The semiconductor device assembly further includes a stack of first semiconductor dies in the cavity, and a second semiconductor die attached to the outer region of the thermal transfer structure and enclosing the stack of first semiconductor dies within the cavity.
公开/授权文献
信息查询
IPC分类: