发明申请
- 专利标题: RF FRONT END ARCHITECTURE
- 专利标题(中): 射频前端结构
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申请号: US14611850申请日: 2015-02-02
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公开(公告)号: US20160119003A1公开(公告)日: 2016-04-28
- 发明人: Marcus Granger-Jones , Nadim Khlat
- 申请人: RF Micro Devices, Inc.
- 主分类号: H04B1/00
- IPC分类号: H04B1/00 ; H04L5/14
摘要:
RF front end circuitry includes mid/high-band switching circuitry and a carrier-aggregation diplexer. The mid/high-band switching circuitry is configured to receive and selectively route mid-band and high-band signals between a mid/high-band output port and a number of mid/high-band transceiver ports. The carrier-aggregation diplexer is coupled to a first one of the mid/high-band transceiver ports. Further, the carrier-aggregation diplexer is configured to pass mid-band signals between a mid-band diplexer port and the first one of the mid/high-band transceiver ports while attenuating other signals, and pass high-band signals between a high-band diplexer port and the first one of the mid/high-band transceiver ports while attenuating other signals.
公开/授权文献
- US09602146B2 RF front end architecture 公开/授权日:2017-03-21
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