Invention Application
US20160118214A1 COLD FIELD ELECTRON EMITTERS BASED ON SILICON CARBIDE STRUCTURES
审中-公开
基于碳化硅结构的冷场电子发射体
- Patent Title: COLD FIELD ELECTRON EMITTERS BASED ON SILICON CARBIDE STRUCTURES
- Patent Title (中): 基于碳化硅结构的冷场电子发射体
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Application No.: US14990035Application Date: 2016-01-07
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Publication No.: US20160118214A1Publication Date: 2016-04-28
- Inventor: Fred Sharifi , Henry Lezec , Myung-Gyu Kang
- Applicant: Fred Sharifi , Henry Lezec , Myung-Gyu Kang
- Applicant Address: US MD GAITHERSBURG US MD College Park
- Assignee: THE NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY,UNIVERSITY OF MARYLAND
- Current Assignee: THE NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY,UNIVERSITY OF MARYLAND
- Current Assignee Address: US MD GAITHERSBURG US MD College Park
- Main IPC: H01J1/304
- IPC: H01J1/304
Abstract:
A cold cathode field emission electron source capable of emission at levels comparable to thermal sources is described. Emission in excess of 6 A/cm2 at 7.5 V/μm is demonstrated in a macroscopic emitter array. The emitter has a monolithic and rigid porous semiconductor nanostructure with uniformly distributed emission sites, and is fabricated through a room temperature process which allows for control of emission properties. These electron sources can be used in a wide range of applications, including microwave electronics and x-ray imaging for medicine and security.
Public/Granted literature
- US09558907B2 Cold field electron emitters based on silicon carbide structures Public/Granted day:2017-01-31
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