Invention Application
US20160118119A1 Memory Programming Methods and Memory Systems 有权
内存编程方法和内存系统

Memory Programming Methods and Memory Systems
Abstract:
Memory programming methods and memory systems are described. One example memory programming method includes first applying a first signal to a memory cell to attempt to program the memory cell to a desired state, wherein the first signal corresponds to the desired state, after the first applying, determining that the memory cell failed to place in the desired state, after the determining, second applying a second signal to the memory cell, wherein the second signal corresponds to another state which is different than the desired state, and after the second applying, third applying a third signal to the memory cell to program the memory cell to the desired state, wherein the third signal corresponds to the desired state. Additional method and apparatus are described.
Public/Granted literature
Information query
Patent Agency Ranking
0/0