发明申请
- 专利标题： LOCALIZED FIN WIDTH SCALING USING A HYDROGEN ANNEAL
- 专利标题（中）： 使用氢气的局部化的翅片宽度缩放
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申请号： US14974763申请日： 2015-12-18
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公开(公告)号： US20160111553A1公开(公告)日： 2016-04-21
- 发明人: VEERARAGHAVAN S. BASKER , SHOGO MOCHIZUKI , TENKO YAMASHITA , CHUN-CHEN YEH
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , RENESAS ELECTRONICS CORPORATION
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L29/417 ; H01L29/06 ; H01L29/423
摘要：
Transistors including one or more semiconductor fins formed on a substrate. The one or more semiconductor fins are thinner in a channel region than in source and drain regions and have rounded corners formed by an anneal in a gaseous environment. A gate dielectric layer is on the channel region of the one or more semiconductor fins, conforming to the contours of the one or more semiconductor fins. A gate structure is on the gate dielectric layer.
公开/授权文献
- US09537015B2 Localized fin width scaling using a hydrogen anneal 公开/授权日：2017-01-03
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