Invention Application
- Patent Title: SEMICONDUCTOR DEVICE
- Patent Title (中): 半导体器件
-
Application No.: US14950624Application Date: 2015-11-24
-
Publication No.: US20160079245A1Publication Date: 2016-03-17
- Inventor: Shunpei YAMAZAKI , Keitaro IMAI , Jun KOYAMA
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Priority: JP2009-249328 20091029
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/786

Abstract:
The semiconductor device includes: a transistor having an oxide semiconductor layer; and a logic circuit formed using a semiconductor material other than an oxide semiconductor. One of a source electrode and a drain electrode of the transistor is electrically connected to at least one input of the logic circuit, and at least one input signal is applied to the logic circuit through the transistor. The off-current of the transistor is preferably 1×10−13 A or less.
Public/Granted literature
- US09806079B2 Semiconductor device Public/Granted day:2017-10-31
Information query
IPC分类: