Invention Application
- Patent Title: SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
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Application No.: US14924527Application Date: 2015-10-27
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Publication No.: US20160064416A1Publication Date: 2016-03-03
- Inventor: Hideki MAKIYAMA , Yoshiki YAMAMOTO
- Applicant: RENESAS ELECTRONICS CORPORATION
- Priority: JP2011-223666 20111011
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/423 ; H01L29/06
Abstract:
The semiconductor integrated circuit device has a hybrid substrate structure which includes both of an SOI structure and a bulk structure on the side of the device plane of a semiconductor substrate. In the device, the height of a gate electrode of an SOI type MISFET is higher than that of a gate electrode of a bulk type MISFET with respect to the device plane.
Public/Granted literature
- US10056406B2 Semiconductor integrated circuit device comprising MISFETs in SOI and bulk subtrate regions Public/Granted day:2018-08-21
Information query
IPC分类:
