发明申请
- 专利标题: POWER MODULE SEMICONDUCTOR DEVICE
- 专利标题(中): 电源模块半导体器件
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申请号: US14829026申请日: 2015-08-18
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公开(公告)号: US20150364393A1公开(公告)日: 2015-12-17
- 发明人: Hirotaka OTAKE , Toshio HANADA
- 申请人: ROHM CO., LTD.
- 优先权: JP2012-111274 20120515; JP2012-165858 20120726
- 主分类号: H01L23/053
- IPC分类号: H01L23/053 ; H01L23/16 ; H01L25/065 ; H01L25/16 ; H01L23/367 ; H01L23/492
摘要:
There is provided a power module semiconductor device allowing reduction in size and weight of a thin type SiC power module. The power module semiconductor device includes: a ceramic substrate; a first pattern of a first copper plate layer disposed on a surface of the ceramic substrate; a first semiconductor chip disposed on the first pattern; a first pillar connection electrode disposed on the first pattern; and an output terminal connected to the first pillar connection electrode.
公开/授权文献
- US09691673B2 Power module semiconductor device 公开/授权日:2017-06-27
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