- 专利标题: SUBSTRATE INCLUDING SELECTIVELY FORMED BARRIER LAYER
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申请号: US14828608申请日: 2015-08-18
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公开(公告)号: US20150357235A1公开(公告)日: 2015-12-10
- 发明人: Yuri M. Brovman , Brian M. Erwin , Nicholas A. Polomoff , Jennifer D. Schuler , Matthew E. Souter , Christopher L. Tessler
- 申请人: International Business Machines Corporation , SUSS MicroTec Photonic Systems Inc.
- 主分类号: H01L21/768
- IPC分类号: H01L21/768
摘要:
A method of selectively locating a barrier layer on a substrate includes forming a barrier layer on a surface of the substrate. The barrier layer comprises of a metal element and a non-metal element. The barrier layer may also be formed from a metal element and non-metal element. The method further includes forming an electrically conductive film layer on the barrier layer, and forming a metallic portion in the electrically conductive film layer. The method further includes selectively ablating portions of the barrier layer from the dielectric layer to selectively locate place the barrier layer on the substrate.
公开/授权文献
- US09748135B2 Substrate including selectively formed barrier layer 公开/授权日:2017-08-29
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