Invention Application
US20150340445A1 SUBSTRATE STRUCTURE AND SEMICONDUCTOR DEVICE ON THE SUBSTRATE STRUCTURE
审中-公开
基板结构和半导体器件在基板结构上的应用
- Patent Title: SUBSTRATE STRUCTURE AND SEMICONDUCTOR DEVICE ON THE SUBSTRATE STRUCTURE
- Patent Title (中): 基板结构和半导体器件在基板结构上的应用
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Application No.: US14645888Application Date: 2015-03-12
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Publication No.: US20150340445A1Publication Date: 2015-11-26
- Inventor: Joon-Young CHOI , Tae-Gon KIM , Hyun-Pil NOH , Jae-Sik BAE , Sam-Jong CHOI
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Priority: KR10-2014-0061340 20140522
- Main IPC: H01L29/36
- IPC: H01L29/36 ; H01L27/146

Abstract:
A substrate structure include a lower substrate doped with n-type impurities having a first impurity concentration, an epitaxial layer on the lower substrate, and a metallic-contaminant collection area spaced apart from the epitaxial layer in the lower substrate, the metallic-contaminant collection area doped with impurities having a second impurity concentration higher than the first impurity concentration, the metallic-contaminant collection area having lattice defects, and an upper surface of the metallic-contaminant collection area being spaced apart from a top surface of the lower substrate at a distance in a range of about 0.1 μm to about 3 μm.
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