Invention Application
US20150340445A1 SUBSTRATE STRUCTURE AND SEMICONDUCTOR DEVICE ON THE SUBSTRATE STRUCTURE 审中-公开
基板结构和半导体器件在基板结构上的应用

SUBSTRATE STRUCTURE AND SEMICONDUCTOR DEVICE ON THE SUBSTRATE STRUCTURE
Abstract:
A substrate structure include a lower substrate doped with n-type impurities having a first impurity concentration, an epitaxial layer on the lower substrate, and a metallic-contaminant collection area spaced apart from the epitaxial layer in the lower substrate, the metallic-contaminant collection area doped with impurities having a second impurity concentration higher than the first impurity concentration, the metallic-contaminant collection area having lattice defects, and an upper surface of the metallic-contaminant collection area being spaced apart from a top surface of the lower substrate at a distance in a range of about 0.1 μm to about 3 μm.
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