发明申请
- 专利标题： METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING CAVITIES TO DISTRIBUTE CONDUCTIVE PATTERNING RESIDUE
- 专利标题（中）： 使用CAID分布导电图案残留制造半导体器件的方法
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申请号： US14522865申请日： 2014-10-24
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公开(公告)号： US20150194599A1公开(公告)日： 2015-07-09
- 发明人: Jongchul Park , Byoungjae Bae , Inho Kim , Shin Kwon , Eunsun Noh , Insun Park , Sangmin Lee
- 申请人： Jongchul Park , Byoungjae Bae , Inho Kim , Shin Kwon , Eunsun Noh , Insun Park , Sangmin Lee
- 优先权： KR10-2014-0001314 20140106
- 主分类号： H01L43/12
- IPC分类号： H01L43/12 ; H01L43/08 ; H01L27/22 ; H01L43/02
摘要：
Methods of manufacturing a semiconductor device include forming a conductive layer on a substrate, forming an air gap or other cavity between the conductive layer and the substrate, and patterning the conductive layer to expose the air gap. The methods may further include forming conductive pillars between the substrate and the conductive layer. The air gap may be positioned between the conductive pillars.
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