发明申请
US20150194336A1 ISOLATION TRENCH FILL USING OXIDE LINER AND NITRIDE ETCH BACK TECHNIQUE WITH DUAL TRENCH DEPTH CAPABILITY
有权
使用氧化锌衬垫和氮化钛回填技术的隔离透气膜，具有双重深度深度能力
- 专利标题： ISOLATION TRENCH FILL USING OXIDE LINER AND NITRIDE ETCH BACK TECHNIQUE WITH DUAL TRENCH DEPTH CAPABILITY
- 专利标题（中）： 使用氧化锌衬垫和氮化钛回填技术的隔离透气膜，具有双重深度深度能力
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申请号： US14589432申请日： 2015-01-05
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公开(公告)号： US20150194336A1公开(公告)日： 2015-07-09
- 发明人: Xianfeng Zhou
- 申请人： MICRON TECHNOLOGY, INC.
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L21/3105 ; H01L21/311 ; H01L29/06
摘要：
An oxide layer is formed over a substrate having a smaller isolation trench and a large isolation trench. A nitride layer is formed over the oxide layer such that it completely fills the smaller isolation trench and lines the larger isolation trench. The nitride layer is etched back to form a recess in the nitride layer in the smaller isolation trench while at least a portion of the nitride layer lining the larger isolation trench is completely removed. A layer of HDP oxide is deposited over the substrate, completely filling the smaller and larger isolation trenches. The HDP oxide layer is planarized to the upper surface of the substrate. The deeper larger isolation trench may be formed by performing an etching step after the nitride layer has been etched back, prior to depositing HDP oxide.
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