Invention Application
- Patent Title: SEMICONDUCTOR DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE
- Patent Title (中): 半导体器件，半导体器件的制造方法和电子器件
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Application No.: US14409634Application Date: 2013-06-19
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Publication No.: US20150179546A1Publication Date: 2015-06-25
- Inventor: Satoru Wakiyama , Masaki Okamoto , Yutaka Ooka , Reijiroh Shohji , Yoshifumi Zaizen , Kazunori Nagahata , Masaki Haneda
- Applicant: SONY CORPORATION
- Priority: JP2012-147316 20120629; JP2013-024505 20130212
- International Application: PCT/JP2013/066876 WO 20130619
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/306 ; H01L21/768 ; H01L25/065 ; H01L25/00
Abstract:
There is provided a semiconductor device including a first semiconductor base substrate, a second semiconductor base substrate that is bonded onto a first surface side of the first semiconductor base substrate, a through electrode that is formed to penetrate from a second surface side of the first semiconductor base substrate to a wiring layer on the second semiconductor base substrate, and an insulation layer that surrounds a circumference of the through electrode formed inside the first semiconductor base substrate.
Public/Granted literature
- US09343392B2 Semiconductor device, manufacturing method for semiconductor device, and electronic device Public/Granted day:2016-05-17
Information query
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