发明申请
US20150123718A1 SEMICONDUCTOR DEVICE HAVING DIODE-BUILT-IN IGBT AND SEMICONDUCTOR DEVICE HAVING DIODE-BUILT-IN DMOS
审中-公开
具有二极管内置IGBT的半导体器件和具有二极管内置DMOS的半导体器件
- 专利标题： SEMICONDUCTOR DEVICE HAVING DIODE-BUILT-IN IGBT AND SEMICONDUCTOR DEVICE HAVING DIODE-BUILT-IN DMOS
- 专利标题（中）： 具有二极管内置IGBT的半导体器件和具有二极管内置DMOS的半导体器件
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申请号： US14597315申请日： 2015-01-15
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公开(公告)号： US20150123718A1公开(公告)日： 2015-05-07
- 发明人: Kenji KOUNO
- 申请人： Denso Corporation
- 优先权： JP2007-229959 20070905; JP2007-268328 20071015; JP2008-96017 20080402; JP2008-96018 20080402
- 主分类号： H01L27/02
- IPC分类号： H01L27/02 ; H03K17/082
摘要：
A semiconductor device includes: a semiconductor substrate; a diode-built-in insulated-gate bipolar transistor having an insulated-gate bipolar transistor and a diode, which are disposed in the substrate, wherein the insulated-gate bipolar transistor includes a gate, and is driven with a driving signal input into the gate; and a feedback unit for detecting current passing through the diode. The driving signal is input from an external unit into the feedback unit. The feedback unit passes the driving signal to the gate of the insulated-gate bipolar transistor when the feedback unit detects no current through the diode, and the feedback unit stops passing the driving signal to the gate of the insulated-gate bipolar transistor when the feedback unit detects the current through the diode.
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