Invention Application
- Patent Title: INDUCTIVE CAPACITIVE STRUCTURE AND METHOD OF MAKING THE SAME
- Patent Title (中): 电感电容结构及其制作方法
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Application No.: US14062924Application Date: 2013-10-25
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Publication No.: US20150115402A1Publication Date: 2015-04-30
- Inventor: Hsiang-Tsung YEN , Cheng-Wei LUO
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L23/522
- IPC: H01L23/522
Abstract:
An inductive capacitive structure including a first substrate, a first conductive line over the first substrate, a first shielding layer over the first substrate and a second substrate over the first substrate.
Public/Granted literature
- US09754874B2 Inductive capacitive structure and method of making the same Public/Granted day:2017-09-05
Information query
IPC分类:
