Invention Application
US20150115280A1 METHODS OF GROWING NITRIDE SEMICONDUCTORS AND METHODS OF MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATES
审中-公开
生长氮化硅半导体的方法和制备氮化物半导体衬底的方法
- Patent Title: METHODS OF GROWING NITRIDE SEMICONDUCTORS AND METHODS OF MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATES
- Patent Title (中): 生长氮化硅半导体的方法和制备氮化物半导体衬底的方法
-
Application No.: US14590548Application Date: 2015-01-06
-
Publication No.: US20150115280A1Publication Date: 2015-04-30
- Inventor: Sung-soo PARK , Moon-sang LEE
- Applicant: Samsung Electronics Co., Ltd.
- Priority: KR1020100015247 20100219; KR1020100082085 20100824
- Main IPC: H01L33/32
- IPC: H01L33/32 ; H01L33/24 ; H01L33/12
Abstract:
Methods of growing nitride semiconductor layers including forming nitride semiconductor dots on a substrate and growing a nitride semiconductor layer on the nitride semiconductor dots. The nitride semiconductor layer may be separated from the substrate to be used as a nitride semiconductor substrate.
Public/Granted literature
- US09318660B2 Methods of growing nitride semiconductors and methods of manufacturing nitride semiconductor substrates Public/Granted day:2016-04-19
Information query
IPC分类:
