The present disclosure provides a photoelectric conversion layer containing a semiconductor and plural metal-containing minute structures dispersed therein. The minute structures are minute structures (A) comprising metal material (α) or otherwise minute structures (B) comprising metal material (α) and material (β) selected from the group consisting of oxide, nitride and oxynitride of substances and the semiconductor. In the minute structures (B), the material (β) is on the surface of the metal material (α). Each of the minute structures has an equivalent circle diameter of 1 nm to 10 nm inclusive on the basis of the projected area when observed from a particular direction. The closest distance between adjacent two of the minute structures is 3 nm to 50 nm inclusive. The present disclosure also provides applications of the photoelectric conversion layer to a solar cell, a photodiode and an image sensor.