Invention Application
- Patent Title: MAGNETIC MEMORY AND MANUFACTURING METHOD THEREOF
- Patent Title (中): 磁记忆及其制造方法
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Application No.: US14203400Application Date: 2014-03-10
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Publication No.: US20150069480A1Publication Date: 2015-03-12
- Inventor: Hiroyuki KANAYA , Dong Jun KIM , Sung Hoon LEE
- Applicant: Hiroyuki KANAYA , Dong Jun KIM , Sung Hoon LEE
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/12
Abstract:
According to one embodiment, a magnetic memory includes a cell transistor including a first source/drain diffusion layer and a second source/drain diffusion layer, a first contact on the first source/drain diffusion layer, a memory element on the first contact, and a second contact on the second source/drain diffusion layer, the second contact including a first plug on the second source/drain diffusion layer, and a second plug on the first plug.
Public/Granted literature
- US09105572B2 Magnetic memory and manufacturing method thereof Public/Granted day:2015-08-11
Information query
IPC分类:
