Invention Application
- Patent Title: EPITAXIAL WAFER FOR HETEROJUNCTION TYPE FIELD EFFECT TRANSISTOR
- Patent Title (中): 异相型场效应晶体管的外延波形
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Application No.: US14372366Application Date: 2013-01-15
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Publication No.: US20140353587A1Publication Date: 2014-12-04
- Inventor: Masayuki Hoteida , Nobuaki Teraguchi , Daisuke Honda , Nobuyuki Ito , Masakazu Matsubayashi , Haruhiko Matsukasa
- Applicant: Sharp Kabushiki Kaisha
- Priority: JP2012-005945 20120116
- International Application: PCT/JP2013/050519 WO 20130115
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/205 ; H01L29/778 ; H01L29/20
Abstract:
An epitaxial wafer for a heterojunction type FET includes an AlN primary layer, a stepwisely composition-graded buffer layer structure, a superlattice buffer layer structure, a GaN channel layer, and a nitride semiconductor electron supply layer, which are sequentially provided on a Si substrate, the stepwisely composition-graded buffer layer structure including a plurality of AlGaN buffer layers provided on each other such that an Al composition ratio is sequentially reduced, an uppermost layer thereof having a composition of AlxGa1—xN (0
Public/Granted literature
- US09111839B2 Epitaxial wafer for heterojunction type field effect transistor Public/Granted day:2015-08-18
Information query
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