- 专利标题： NON-LITHOGRAPHIC LINE PATTERN FORMATION
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申请号： US14456212申请日： 2014-08-11
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公开(公告)号： US20140349088A1公开(公告)日： 2014-11-27
- 发明人: Chiahsun Tseng , David V. Horak , Chun-chen Yeh , Yunpeng Yin
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/308
- IPC分类号： H01L21/308 ; H01L21/67
摘要：
A metal layer is deposited over an underlying material layer. The metal layer includes an elemental metal that can be converted into a dielectric metal-containing compound by plasma oxidation and/or nitridation. A hard mask portion is formed over the metal layer. Plasma oxidation or nitridation is performed to convert physically exposed surfaces of the metal layer into the dielectric metal-containing compound. The sequence of a surface pull back of the hard mask portion, trench etching, another surface pull back, and conversion of top surfaces into the dielectric metal-containing compound are repeated to form a line pattern having a spacing that is not limited by lithographic minimum dimensions.
公开/授权文献
- US09396957B2 Non-lithographic line pattern formation 公开/授权日：2016-07-19
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