发明申请
- 专利标题: Sputtering Target for Magnetic Recording Film
- 专利标题(中): 磁记录膜溅射靶
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申请号: US14372236申请日: 2013-05-22
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公开(公告)号: US20140346039A1公开(公告)日: 2014-11-27
- 发明人: Shini-ichi Ogino
- 申请人: JX Nippon Mining & Metals Corporation
- 优先权: JP2012-136958 20120618
- 国际申请: PCT/JP2013/064242 WO 20130522
- 主分类号: C23C14/16
- IPC分类号: C23C14/16 ; G11B5/851 ; G11B5/65 ; C23C14/34
摘要:
Provided is a sputtering target for a magnetic recording film. The sputtering target has a peak intensity ratio (IG/ID) of a G-band to a D-band of 5.0 or more in Raman scattering spectrometry. It is an object of the present invention to produce a magnetic thin film having a granular structure without using a high cost co-sputtering apparatus and to provide a sputtering target, in particular, an Fe—Pt-based sputtering target for a magnetic recording film, where carbon particles are dispersed in the target. Since carbon is a material which is not susceptible to being sintered and is susceptible to form aggregates, a conventional carbon-containing sputtering target has the problem that detachment of carbon lumps occurs during sputtering to result in generation of a large number of particles on the film. The present invention also addresses the problem of providing a high density sputtering target that can overcome the disadvantages.
公开/授权文献
- US09540724B2 Sputtering target for magnetic recording film 公开/授权日:2017-01-10
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