发明申请
- 专利标题： TRENCH PATTERNING WITH BLOCK FIRST SIDEWALL IMAGE TRANSFER
- 专利标题（中）： 用第一个小块图像转移的TRENCH模式
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申请号： US13866293申请日： 2013-04-19
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公开(公告)号： US20140315380A1公开(公告)日： 2014-10-23
- 发明人: Sivananda K. Kanakasabapathy , Chiahsun Tseng , Yongan Xu , Yunpeng Yin
- 申请人： International Business Machines Corporation
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/308
摘要：
A method including forming a tetra-layer hardmask above a substrate, the tetra-layer hardmask including a second hardmask layer above a first hardmask layer; removing a portion of the second hardmask layer of the tetra-layer hardmask within a pattern region of a structure comprising the substrate and the tetra-layer hardmask; forming a set of sidewall spacers above the tetra-layer hardmask to define a device pattern; and transferring a portion of the device pattern into the substrate and within the pattern region of the structure.
公开/授权文献
- US09064813B2 Trench patterning with block first sidewall image transfer 公开/授权日：2015-06-23
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