Invention Application
US20140293474A1 CPP-TYPE MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC DISK DEVICE USING SIDE SHIELD LAYERS
有权
CPP型磁阻效应元件和使用侧面屏蔽层的磁性磁体器件
- Patent Title: CPP-TYPE MAGNETORESISTANCE EFFECT ELEMENT AND MAGNETIC DISK DEVICE USING SIDE SHIELD LAYERS
- Patent Title (中): CPP型磁阻效应元件和使用侧面屏蔽层的磁性磁体器件
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Application No.: US13853869Application Date: 2013-03-29
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Publication No.: US20140293474A1Publication Date: 2014-10-02
- Inventor: Takekazu YAMANE , Takahiko MACHITA , Naomichi DEGAWA , Minoru OTA , Kenta HAMAMOTO
- Applicant: TDK CORPORATION
- Applicant Address: JP TOKYO
- Assignee: TDK CORPORATION
- Current Assignee: TDK CORPORATION
- Current Assignee Address: JP TOKYO
- Main IPC: G11B5/39
- IPC: G11B5/39 ; H01L43/08

Abstract:
An MR element includes an MR part and upper and lower shield layers in a CPP structure. The MR element has side shield layers so as to interpose the MR part between the side shield layers in a track width direction. The MR part comprises a nonmagnetic intermediate layer and first and second ferromagnetic layers so as to interpose the nonmagnetic intermediate layer between the ferromagnetic layers. Each of the upper and lower shield layers has an inclined magnetization structure such that its magnetization is inclined relative to the track width direction. The side shield layers are magnetically coupled with the upper shield layer, respectively. The second ferromagnetic layer is indirectly magnetically coupled with the lower shield layer via an exchange-coupling functional gap layer. The side shield layer applies a bias magnetic field to the first ferromagnetic layer; and magnetizations of the first and second ferromagnetic layers are substantially orthogonal.
Public/Granted literature
- US08913349B2 CPP-type magnetoresistance effect element and magnetic disk device using side shield layers Public/Granted day:2014-12-16
Information query
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