发明申请
US20140287245A1 DENSE COMPOSITE MATERIAL, METHOD FOR MANUFACTURING THE SAME, JOINED BODY, AND MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUSES 有权
DENSE复合材料,其制造方法,接合体和用于半导体制造装置的部件

  • 专利标题: DENSE COMPOSITE MATERIAL, METHOD FOR MANUFACTURING THE SAME, JOINED BODY, AND MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUSES
  • 专利标题(中): DENSE复合材料,其制造方法,接合体和用于半导体制造装置的部件
  • 申请号: US14220289
    申请日: 2014-03-20
  • 公开(公告)号: US20140287245A1
    公开(公告)日: 2014-09-25
  • 发明人: Asumi JINDOKatsuhiro INOUEYuji KATSUDA
  • 申请人: NGK Insulators, Ltd.
  • 申请人地址: JP Nagoya-City
  • 专利权人: NGK Insulators, Ltd.
  • 当前专利权人: NGK Insulators, Ltd.
  • 当前专利权人地址: JP Nagoya-City
  • 优先权: JP2013-061856 20130325
  • 主分类号: H01L21/683
  • IPC分类号: H01L21/683 B32B9/00
DENSE COMPOSITE MATERIAL, METHOD FOR MANUFACTURING THE SAME, JOINED BODY, AND MEMBER FOR SEMICONDUCTOR MANUFACTURING APPARATUSES
摘要:
A dense composite material according to the present invention contains, in descending order of content, silicon carbide, titanium silicon carbide, and titanium carbide as three major constituents. The dense composite material contains 51% to 68% by mass of silicon carbide and no titanium silicide and has an open porosity of 1% or less. This dense composite material has properties such as an average linear thermal expansion coefficient of 5.4 to 6.0 ppm/K at 40° C. to 570° C., a thermal conductivity of 100 W/m·K or more, and a four-point bending strength of 300 MPa or more.
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